? semiconductor components industries, llc, 2013 august, 2013 ? rev. 4 1 publication order number: njt4031n/d njt4031n, njv4031nt1g, NJV4031NT3G bipolar power transistors npn silicon features ? epoxy meets ul 94, v ? 0 @ 0.125 in ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings (t c = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v cb 40 vdc emitter ? base voltage v eb 6.0 vdc base current ? continuous i b 1.0 adc collector current ? continuous i c 3.0 adc collector current ? peak i cm 5.0 adc esd ? human body model hbm 3b v esd ? machine model mm c v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total power dissipation total p d @ t a = 25 c (note 1) to t a l p d @ t a = 25 c (note 2) p d 2.0 0.80 w thermal resistance, junction ? to ? case junction ? to ? ambient (note 1) junction ? to ? ambient (note 2) r ja r ja 64 155 c/w maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds t l 260 c operating and storage junction temperature range t j , t stg ? 55 to + 150 c 1. mounted on 1? sq. (645 sq. mm) collector pad on fr ? 4 bd material. 2. mounted on 0.012? sq. (7.6 sq. mm) collector pad on fr ? 4 bd material. sot ? 223 case 318e style 1 marking diagram npn transistor 3.0 amperes 40 volts, 2.0 watts http://onsemi.com 1 4031n ayw a = assembly location y year w = work week 4031n = specific device code = pb ? free package collector 2,4 base 1 emitter 3 device package shipping ? ordering information njt4031nt1g sot ? 223 (pb ? free) 1000 / tape & reel njt4031nt3g sot ? 223 (pb ? free) 4000 / tape & reel njv4031nt1g NJV4031NT3G ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 1 2 3 4
njt4031n, njv4031nt1g, NJV4031NT3G http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ?????????????????? ?????????????????? ?????????????????? characteristic ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ????????????????????????????????? ????????????????????????????????? ?????????????????? ?????????????????? ?????????????????? collector ? emitter sustaining voltage (i c = 10 madc, i b = 0 adc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? ???? ???? ???? vdc ?????????????????? ?????????????????? ?????????????????? ? base voltage (i e = 50 adc, i c = 0 adc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? ???? ???? ???? vdc ?????????????????? ?????????????????? ?????????????????? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? ???? ???? ???? 100 ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? ???? ???? ???? 100 ???? ???? ???? ????????????????????????????????? ????????????????????????????????? on characteristics (note 3) ?????????????????? ?????????????????? ?????????????????? ?????????????????? ? emitter saturation voltage (i c = 0.5 adc, i b = 5.0 madc) (i c = 1.0 adc, i b = 10 madc) (i c = 3.0 adc, i b = 0.3 adc) ???? ???? ???? ???? ???? ???? ???? ???? ? ? ? ???? ???? ???? ???? ???? ???? ???? ???? 0.100 0.150 0.300 ???? ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ? emitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) ???? ???? ???? ???? ???? ???? ? ???? ???? ???? ???? ???? ???? 1.0 ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ? emitter on voltage (i c = 1.0 adc, v ce = 2.0 vdc) ???? ???? ???? ???? ???? ???? ? ???? ???? ???? ???? ???? ???? 1.0 ???? ???? ???? ?????????????????? ?????????????????? ?????????????????? ?????????????????? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ? ? ???? ???? ???? ???? 500 ???? ???? ???? ???? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????? ?????????????????? ?????????????????? output capacitance (v cb = 10 vdc, f = 1.0 mhz) ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 25 ???? ???? ???? ? ???? ???? ???? pf ?????????????????? ?????????????????? ?????????????????? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 170 ???? ???? ???? ? ???? ???? ???? pf ?????????????????? ?????????????????? ?????????????????? ? gain ? bandwidth product (note 4) (i c = 500 ma, v ce = 10 v, f test = 1.0 mhz) ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 215 ???? ???? ???? ? ???? ???? ???? mhz 3. pulse test: pulse width 300 s, duty cycle 2%. 4. f t = |h fe | ? f test figure 1. power derating t j , temperature ( c) 150 100 75 50 25 0 0.5 1.0 1.5 2.0 2.5 p d , power dissipation (w) t c 125 t a
njt4031n, njv4031nt1g, NJV4031NT3G http://onsemi.com 3 typical characteristics figure 2. dc current gain figure 3. dc current gain i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0 100 200 300 400 500 600 10 1 0.1 0.01 0.001 0 100 200 300 500 600 700 figure 4. collector ? emitter saturation voltage figure 5. collector ? emitter saturation voltage i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0.001 0.001 0.01 0.1 1 10 1 0.1 0.01 0.001 0.01 0.1 1 figure 6. collector saturation region figure 7. v be(on) voltage i b , base current (a) i c , collector current (a) 0.001 0.0001 0.01 0.1 1 10 1 0.1 0.01 0.001 0 0.2 0.4 0.6 1.2 h fe , dc current gain h fe , dc current gain v ce(sat) , collector ? emitter saturation voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) v ce(sat) , collector ? emitter saturation voltage (v) v be(on) , emitter ? base voltage (v) v ce = 1 v 150 c ? 55 c 25 c v ce = 4 v 150 c ? 55 c 25 c 400 i c /i b = 10 150 c ? 55 c 25 c i c /i b = 50 150 c ? 55 c 25 c 0.01 0.1 1.0 0.8 1.0 v ce = 2 v 150 c ? 55 c 25 c i c = 3 a 0.1 a 1 a 0.5 a 2 a
njt4031n, njv4031nt1g, NJV4031NT3G http://onsemi.com 4 typical characteristics figure 8. base ? emitter saturation voltage figure 9. base ? emitter saturation voltage i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.2 1.4 figure 10. input capacitance figure 11. output capacitance v eb , emitter base voltage (v) v cb , collector base voltage (v) 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 70 60 50 40 30 20 10 0 0 20 40 60 80 100 figure 12. current ? gain bandwidth product figure 13. safe operating area i c , collector current (a) v ce , collector ? emitter voltage (v) 10 0.1 0.01 0.001 0 240 40 120 200 100 10 1 0.01 0.1 1 10 v be(sat) , emitter ? base saturation voltage (v) c ibo , input capacitance (pf) c obo , output capacitance (pf) f ta u , current bandwidth product (mhz) i c , collector current (a) 0.4 0.6 0.8 1.0 1.2 i c /i b = 10 150 c ? 55 c 25 c i c , collector current (a) 10 1 0.1 0.01 0.001 0 0.2 1.4 v be(sat) , emitter ? base saturation voltage (v) 0.4 0.6 0.8 1.0 1.2 i c /i b = 50 150 c ? 55 c 25 c t j = 25 c f test = 1 mhz t j = 25 c f test = 1 mhz 80 160 t j = 25 c f test = 1 mhz v ce = 10 v 0.5 ms 10 ms 100 ms 1 ms 400 450 8 7 90 80 1
njt4031n, njv4031nt1g, NJV4031NT3G http://onsemi.com 5 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? style 1: pin 1. base 2. collector 3. emitter 4. collector *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 njt4031n/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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